Spectral responses of GaAs photodiodes fabiricated by rapid thermal diffusion
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概要
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The spectral responses of GaAs photodiodes fabricated by rapid thermal diffusion (RTD) of Zn are presented. The authors tried controlling the p+-n junction depth by the heating rate of RTD, without extending the diffusion time. It is found that Zn diffuses from the surface to a deeper position as the heating rate increases. Consequently, the spectral response of photodiodes formed by RTD is strongly dependent on the heating rate of RTD. A large improvement in the short-wavelength response between 400 and 800 nm is observed as the heating rate decreases.
- IEEE = Institute of Electrical and Electronics Engineersの論文
- 1992-01-00
IEEE = Institute of Electrical and Electronics Engineers | 論文
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