An initio calculations for defects in silicon-based amorphous semiconductors
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概要
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We have calclulated the ESR hyperfine parameters of threefold-coordinated Si atoms and twofold-coordinated P and N atoms in Si-based amorphous semiconductors using the density functional theory with a local-spin-density approximation. These calculated results have been compared with the observed ESR results.
- Materials Research Societyの論文
Materials Research Society | 論文
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