Origin of surface defects in a-Si:H films
スポンサーリンク
概要
- 論文の詳細を見る
Surface oxidation and surface defect creation processes in a-Si:H films have been studied in detail by means of electron spin resonance(ESR) and X-ray photoelectron spectroscopy(XPS). It is found that Si dangling bonds created by the surface oxidation distribute far wider than the thickness of the SiO2 layer. These defects are also found to be removed out by annealing at around 100cC. These defects are proposed to be created by a stress in a-Si:H induced by the surface oxidation. Moreover, the presence of the surface defects unrelated to oxidation is shown for the first time by the present experiment. The origin of these defects, however, are not clear at present.
- Materials Research Societyの論文
- 1992-00-00
Materials Research Society | 論文
- Effects of reaction parameters on the electrochemical formation of multilayer films composed of manganese oxides and tetra-alkylammonium ions
- Preparation of a transparent and flexible self-standing film of layered titania/isostearate nanocomposite
- Crystal growth modified by pulsed laser irradiation on growing surface in Ba-Cu-O film preparation by laser ablation
- Imaging of piezoelectric activity in laser ablated c-axis-oriented LiNbO3/ZnO thin film multilayer on glass using atomic force microscopy
- Dynamical behavior of voids in neutron-irradiated copper at elevated temperature