Investigation on the Gold-Wire Bondability for the IC Device
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In order to develop a microstructure observing technique for wire-bonded interfaces, which is important in the IC industry, thin films-of wire-bonded gold-aluminum samples were prepared by ion milling and microtome techniques and observed by transmission electron microscopy (TEM). The effect of organic contamination for wire-bonding and the dependence of wire-bondability on the thickness of plated gold film and the plating method were also investigated by TEM and shear tests. The results obtained are as follows.(1) In the films prepared with a microtome no amorphous phase is observed, whereas in the films prepared by ion milling a large part of the intermetallic compound formed on the interface has become amorphous. (2) At the whole interface of the cleaned samples the intermetallic-compound is observed, whereas at the interface of the contaminated samples an organic contamination layer is observed instead of the intermetallic-compound. The cleaned samples are generally higher in shear strength than the contaminated samples. (3) Voids are produced by heating along the gold-intermetallic compound interface. The voids deteriorate the bond strength. (4) Without heat treatment the bond strength does not depend on either the gold-film thickness or the plating method. (5) The nickel (from the substrate) concentration at the film surface increases with increasing heating period, and as a result the bond strength decreases. (6) The bond strength of samples bonded after heat treatment recovers when a surface layer of the gold film is removed before wire-bonding.From these results, a suitable technique for TEM observation of the wire-bonded interface and the effects of contamination on wire-bondability are discussed.
- 九州大学大学院総合理工学研究科の論文
- 1994-03-01
九州大学大学院総合理工学研究科 | 論文
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