α－Ａｌ２Ｏ３中の照射欠陥の陽電子消滅測定による研究
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Positron annihilation studies have been performed for the radiation-induced defects in \alpha-Al2O3 specimens. Before irradiation polycrystals of \alpha- Al2O3 showed positron annihilation lifetime about 125 psec. But this value was increased by 60 MeV O6＋ ion irradiation to about 155 psec. This is considered to be corresponding to positron lifetime at O-vacancy sites. But, this lifetime disappeared gradually in the period of several months probably because of recombination of vacancies and interstitial atoms at room temperature. On the other hand, it was found that in single crystals positron lifetime before irradiation is between these two values. This is probably due to lack of oxygen atoms in single crystals in the fabrication process and it already has O-vacancies in the matrix before irradiation．
- 九州大学大学院総合理工学研究科の論文
- 1989-09-01
九州大学大学院総合理工学研究科 | 論文
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