半導体パッケージング技術に用いる無電解めっき法によるメタライゼーションの基礎的検討

概要

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Recently,a high density packaging technology is one of the most important candidates to realize ubiquitous networking society because electronic devices strongly requested to downsize and to use multi-function. A wafer level chip size package(W-CSP)is also important and environmental friendly technology. A metallization is necessary for W-CSP,which has some different material,such as silicon nitride(SiN),aluminum(Al)and polyimide(PI). An electroless plating method has much advantage to metalize insulate materials. By changing complexing agents in electroless Ni-P bath,many properties,i.e.,deposition rate,adhesion force between Ni-P film and substrate,and stress,have changed. The Ni-P films have been plated from the baths,which use three complexing agents,acetic acid,succinic acid and glycine,showed high adhesion force. However,no obvious relationship between above three properties has been observed. For electroless plating,activation is necessary to start deposition. Two-solution type activation which is combination of sensitizing solution and activating solution demonstrates high adhesion properties between Ni-P film and three different substrates,SiN,Al and PI. One solution type activating system shows high adhesion force for PI but poor for both SiN and Al. Therefore,optimization of complexing agents and activating system is important for metallization.