高速バリスティック伝導用の新構造半導体デバイスの研究：ソースヘテロ構造による電子速度の向上
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概要
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We have experimentally studied a novel high-speed MOSFET with source heterojunctionstructures (SHOT) for the ballistic transport of carriers and successfully demonstrated high velocity electron injection into the channel from the source regions at room and low latticetemperaturesin SHOTs. Moreover, a new abrupt source-heterojunction with relaxed/strainedsemiconductorstructures has been developed by the local O+ ion implantation technique.
- 2009-10-20
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