Optical Bit-Memory Element Based on Bi-Stability between Different Lateral Modes Using Novel Active Multi-Mode-Interferometer (MMI) for Random Access Memory (RAM) Application
スポンサーリンク
概要
- 論文の詳細を見る
A novel principle of active multi-mode-ingerferometer (MMI) bi-stable laser diode (BLD), utilizing differnt lateral modes, has been proposed and demonstrated for optical random access memory (RAM) application. The two different propagation modes realize two different identical paths in a single active MMI cavity simultaneously, with shering exactly same port at one facet side. This novel concept contributes to realize relatively large cross-gain saturation region between the two identical paths, which result in stable bi-stability even in a relatively compact device size. Implemented devices showed relatively low operation current of 100mA and sufficient hysteresis window of 8mA with the cavity length of only 550 micro meters. High optical ON/OFF ratio of more than 15dB was also confirmed successfully.
論文 | ランダム
- 輸送から見た材料 (素材産業はどうなる)
- 地上高差及びけん垂吊位置による各種がいしの汚損
- 転流余裕角補償による無整流子電動機の駆動特性について
- 高分子材料の環境応力劣化と耐環境応力性の新しい評価法
- 成形材料デ-タファイル活用にあたって--調査にみるプラスチック成形材料のトレンド (プラスチック成形材料・成形機械デ-タファイル)