Time-resolved and space-resolved Si lattice-temperature measurements during cw laser annealing of Si on sapphire
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概要
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We have developed an optical technique for in situ measurement of temporal change and spacial profile of Si lattice temperature during cw laser annealing. This technique utilizes time-dependent optical interference in Si films on insulator. By using a microscope for focusing a laser probe beam to 2.0 µm, time-resolved and space-resolved Si lattice-temperatures were measured below the melting point (1412 °C) on a time scale of 10－4–100 s during cw laser annealing of Si on sapphire.
- The American Institute of Physicsの論文
The American Institute of Physics | 論文
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