常温で作動する半導体マイクロ酸素センサー<ミニノート>

概要

論文の詳細を見る
A sputtered LaF3 film was applied to construct a semiconductor micro-oxygen sensor consisting of a Pt/LaF3/SiO2/n-Si/Al structure. The sensor showed a stable response in the oxygen partial pressure range of 0.1-1.0 atm at ambient temperature. The sensitivity and response time strongly depended on the fabrication conditions of LaF3 and Pt films, and the optimum sputtering conditions to prepare the films were investigated. The highly sensitive sensor element was obtained at a relatively high deposition rate (15nm/min)of LaF3 film and at a high Ar pressure of 10.7Pa. It was shown from ESCA analysis that the higher sensitivity was attained by the higher[F]/[La]ratio[x]of the LaFx film.
埼玉大学分析センターの論文
1991-11-00