Dynamic pathways to mediate reactions buried in thermal fluctuations. I. Time-dependent normal form theory for multidimensional Langevin equation
スポンサーリンク
概要
- 論文の詳細を見る
We present a novel theory which enables us to explore the mechanism of reaction selectivity and robust functions in complex systems persisting under thermal fluctuation. The theory constructs a nonlinear coordinate transformation so that the equation of motion for the new reaction coordinate is independent of the other nonreactive coordinates in the presence of thermal fluctuation. In this article we suppose that reacting systems subject to thermal noise are described by a multidimensional Langevin equation without a priori assumption for the form of potential. The reaction coordinate is composed not only of all the coordinates and velocities associated with the system (solute) but also of the random force exerted by the environment (solvent) with friction constants. The sign of the reaction coordinate at any instantaneous moment in the region of a saddle determines the fate of the reaction, i.e., whether the reaction will proceed through to the products or go back to the reactants. By assuming the statistical properties of the random force, one can know a priori a well-defined boundary of the reaction which separates the full position-velocity space in the saddle region into mainly reactive and mainly nonreactive regions even under thermal fluctuation. The analytical expression of the reaction coordinate provides the firm foundation on the mechanism of how and why reaction proceeds in thermal fluctuating environments.
- American Institute of Physicsの論文
- 2009-12-14
American Institute of Physics | 論文
- Influence of film composition in Co2MnSi electrodes on tunnel magnetoresistance characteristics of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions
- Tunneling anisotropic magnetoresistance in epitaxial CoFe/n-GaAs junctions
- Highly spin-polarized tunneling in fully epitaxial Co2Cr0.6Fe0.4Al/MgO/Co50Fe50 magnetic tunnel junctions with exchange biasing
- Tunnel magnetoresistance in epitaxial magnetic tunnel junctions using full-Heusler alloy Co2MnGe thin film and MgO tunnel barrier
- Structural and magnetic properties of epitaxially grown full-Heusler alloy Co2MnGe thin films deposited using magnetron sputtering