Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits

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A room-temperature pulsed operation was demonstrated using lateral current injection-type lasers composed of a 400-nm-thick GaInAsP core layer with compressively strained 5 quantum wells. A threshold current of 105 mA and corresponding density of 1.3 kA/cm2 (260 A/cm2 per well) were obtained with the stripe width of 5.4 μm and the cavity length of 1.47 mm. A fundamental transverse mode operation was obtained with the narrower stripe device of 2.0 μm and the cavity length of 805 μm, while the threshold current and corresponding density were 49 mA and 3.0 kA/cm 2, respectively. © 2009 Optical Society of America.
2009-07-20