The emission process of secondary ions from solids bombarded with large gas cluster ions
スポンサーリンク
概要
- 論文の詳細を見る
We investigated the effects of size and energy of large incident Ar cluster ions on the secondary ion emission of Si. The secondary ions were measured using a double deflection method and a time-of-flight (TOF) technique. The size of the incident Ar cluster ions was between a few hundreds and several tens of thousands of atoms, and the energy up to 60 keV. Under the incidence of keV energy atomic Ar ions, atomic Si ions were mainly detected, and Si cluster ions were rarely observed. On the other hand, under the incidence of large Ar cluster ions, the dominant secondary ions were Sin + (2≤n≤11). It has become clear that the yield ratio of secondary Si cluster ions was determined by the velocity of the incident cluster ions, and this strong dependence of the yield ratio on incident velocity should be related to the mechanisms of secondary ion emission under large Ar cluster ion bombardment.
論文 | ランダム
- 福島県ゆかりの医人達
- Promotion of gender equality in Mie and grass-roots leaders. Part 2
- 小児両耳小骨奇形2症例の対応
- 慢性中耳炎および真珠腫性中耳炎における骨導閾値について
- チューブ留置後の鼓膜穿孔症に対する鼓膜形成術について