Terahertz characterization of semiconductor alloy AlInN: negative imaginary conductivity and its meaning
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概要
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Through terahertz time-domain spectroscopy, negative imaginary conductivity is observedin In-rich AlInN film grown by metal-organic chemical vapor deposition for frequenciesfrom 0.2 to 2.0 THz. This non-Drude behavior is explained based on the electron backscattering theory of N. V. Smith. Comparing with binary semiconductor InN, potentialfluctuations produced by composition inhomogeneity and alloy scattering of carriers makeIn-rich AlInN alloy easier subjected to non-Drude behavior in electrical performance.