High-temperature annealing behavior of deep levels in 1 MeV electron irradiated p-type 6H-SiC
スポンサーリンク
概要
- 論文の詳細を見る
We report on the thermal stability of deep levels detected after 1 MeV electron irradiated p-type 6H-SiC. The investigation was performed by deep level transient spectroscopy, and an isochronal annealing series was carried out in the 373–2073 K temperature range. We found seven traps located between 0.23 and 1.3 eV above the valence band edge (EV). Two traps anneal out at temperatures below 1273 K, while the others display a high thermal stability up to 2073 K. The nature of the detected traps is discussed on the basis of their annealing behavior and previous data found in the literature.
- 2008-07-21
論文 | ランダム
- 社会保障Q&A 育児・介護雇用安定等助成金の再編
- 第4回北海道開発協会助成活動発表会・懇談会
- 活動助成 758でまえワークショッパーズの活動
- 「田中健記念研究助成事業」について (精神科診療所の現在) -- (日精診の活動)
- 日本の外交・防衛政策の諸課題(46)防衛施設周辺地域への助成金