Fabrication of C-60 nanostructures by selective growth on GaSe/MoS2 and InSe/MoS2 heterostructure substrates

概要

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C-60 molecules were deposited on a submonolayer InSe film which was grown on a MoS2 substrate. In the previous experiment on the growth of a C-60 thin film on a GaSe/MoS2 heterostructure, C-60 grew only on exposed MoS2 regions and never nucleated on GaSe domains at substrate temperature above 180 degrees C. In the present case, however, C-60 molecules grow only on InSe domains and do not nucleate on the exposed MoS2 when the substrate temperature is higher than 80 degrees C. Using this method, C-60 domains whose dimension is smaller than 100 nm could be fabricated on each InSe domain. The selectivity of the C-60 growth is supposed to originate not from the surface morphology of those heterostructures, but from the difference in adsorption energy and surface diffusion energy of C-60 molecules on the surfaces of three different layered materials and a C-60 film. (C) 1998 Elsevier Science B.V. All rights reserved.
Elsevier Science B.V.の論文
1998-01-00