p-Si/beta-FeSi2/n-Si double-heterostructure light-emitting diodes achieving 1.6 µm electroluminescence of 0.4 mW at room temperature
スポンサーリンク
概要
- 論文の詳細を見る
Electroluminescence at an emission power of over 0.4 mW is achieved at an emission wavelength of 1.6 µm using a p-Si/beta-FeSi2/n-Si double-heterostructure light-emitting diode. This emission power is obtained at room temperature under current injection of 460 mA, corresponding to an external quantum efficiency of approximately 0.1%. Photoluminescence and time-resolved photoluminescence measurements for devices with different thicknesses of beta-FeSi2 indicate that radiative recombination rate increased as the thickness of the beta-FeSi2 active layer is increased.
論文 | ランダム
- Exploration of New Molecular Mechanisms for Antidepressant Actions of Electroconvulsive Seizure
- 江戸東京博物館の資料情報システム
- 美術館・博物館紹介 : 東京都江戸東京博物館
- 江戸の宮地芝居と小芝居の小屋(パフォーマンス空間の伝統と現在)(魅力ある劇場空間のために)
- 第27回ギャザリング報告 : 遊べる博物館=江戸東京博物館