Oxygen Exchange at the Internal Surface of Amorphous SiO2 Studied by Photoluminescence of Isotopically Labeled Oxygen Molecules

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• The exchange between lattice and interstitial oxygen species in an oxide was studied by the 16O-18O isotope shift of the a1Deltag(v=0)-->X3Sigma_g^-(v=1) infrared photoluminescence band of the oxygen molecules (O2) incorporated into the interstitial voids of amorphous SiO2 (a-SiO2) by thermal annealing in 18O2 gas. A large site to site variation of the oxygen exchange rate, originating from structural disorder of a-SiO2, is found. The average exchange rate has an activation energy of ~2 eV, which is much larger than that for the diffusion of interstitial O2 (~0.8–1.2 eV). The average exchange-free diffusion length of interstitial O2 exceeds ~1 µm below 900 °C, providing definite evidence that oxygen diffuses as interstitial molecules in a-SiO2.

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