Growth of ferromagnetic Fe4N epitaxial layers and a-axis-oriented Fe4N/MgO/Fe magnetic tunnel junction on MgO(0 0 1) substrates using molecular beam epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
a-Axis-oriented 80-nm-thick γ′-Fe4N films were epitaxially grown on MgO(0 0 1) substrates by supplying the Fe and N sources on the predeposited a-axis-oriented 30-nm-thick α-Fe epitaxial film. This technique has been used to form highly a-axis-oriented Fe4N(75 nm)/MgO(1 nm)/Fe(100 nm) magnetic tunnel junctions (MTJs) from the Fe(7 nm)/MgO(1 nm)/Fe(100 nm) on the MgO(0 0 1) substrate. Magnetization versus the magnetic field curve of the MTJ was measured at 280 K, and a two-step hysteresis loop was clearly observed. This observation shows that the two ferromagnetic layers were separated by a 1-nm-thick MgO barrier.
論文 | ランダム
- 教材開発と実践的研究
- わが国におけるリハビリテーション医療の発展を妨げるもの
- 授業の展開過程に位置づく教材開発のための基礎的研究
- 教材開発--小学校電気磁気関係
- 理科学習過程の適用段階を見直す--小学校学習事例を基にして