非晶質 Ge 膜の電気的特質

概要

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Amorphous Ge film, vacuum-evaporated on glass substrates, is known as a sort of semi-conductor. The present thesis is intended to investigate the influences of film thickness and impurities on its electrical resistivity as well as the temperature dependence of the resistivity, and following conclusions are drawn ; It (i.e., resistivity of amorphous Ge film) is independent of the thickness of the film within the range of 200-1000A. It is also independent of the vacuum ambients when film is produced in the vacuum of 10⁻⁹-10⁻⁷ Torr, though it grows higher when produced in 10⁻⁴ Torr owing to the incorporation of residual gases. It is rather insensitive to the addition of impurities such as Al, In and Sb below 1 atomic per cent. The temperature dependence of resistivity of pure, well-annealed amorphous Ge film was measured (below amorphous-crystalline transition temperature). And it is found that the activation energy for the electrical conduction amounts to 1.0 eV. This is to be interpreted in terms of the energy band gap broader than in the case of crystalline Ge.
信州大学工学部の論文
1967-12-25