DLTS and its Simulation for GaP Schottky Junction
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概要
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The method of simulation for the DLTS signal is described for the electron traps having a single sharp energy level and/or a broadened energy level in the p+n (or schottky) junction. From the result of the simulation for the sharp level, the effects of the parameters used for the simulation on the shapes of DLTS signals are demonstrated. The temperature and the half width of the DLTS peak depend systematically on all the parameters, while the height of the peak depends only on the ratio t1/t2 of the sampling times. The experimental DLTS signals are obtained for the GaP Schottky junctions before and after electron irradiation. There are two kinds of the experimental DLTS peaks in the irradiated GaP, one is the narrow peak which can be reproduced by the simulated curve for the sharp level, and the other is the broad peak which can be reproduced by the composed simulation curve for the broadened level. The level broadening is estimated by the simulation to be 0.134 eV for the defect introduced by the electron irradiation at 10MeV. It is suggested that the simple and very complex defects coexist in the irradiated GaP.
- Faculty of Engineering, Mie Universityの論文
- 1988-12-20
Faculty of Engineering, Mie University | 論文
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