Nanoscale phase changes in crystalline Ge2Sb2Te5 films using scanning probe microscopes
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概要
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Nanoscale amorphous marks have been produced in crystalline Ge2Sb2Te5 films using anatomic-force microscope (AFM) and a scanning-tunneling microscope (STM) through electricalphase changes. Voltage pulses with duration of 5–100 ns applied by metal probes of the AFM andthe STM can produce, respectively, high-resistance regions and deformations, the smallest sizesbeing ~10 and ~100 nm in diameter. Raman-scattering spectra demonstrate that these marks areamorphous. The AFM mark can be erased by applying longer pulses. Formation processes of themarks are considered from electrothermal and thermodynamic aspects.
- American Institute of Physicsの論文
- 2006-01-15
American Institute of Physics | 論文
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