Correlation effects of quantum rotors in Ge crystals
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概要
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We address the accurate treatment of dipolar interaction effects between oxygen defects in Ge crystals on the low-temperature properties of bulk systems. On the basis of a quantum rotor model, we reveal that the interaction between adjacent oxygen defects generates nontrivial low-lying excitations that result in power-law specific heats below 0.1 K. In addition, a peculiar hump is observed for the dielectric susceptibilities at approximately I K. Further, we contend that the predicted power-law specific heats are well described by the two-level tunneling theory, which is based on the random distribution of interacting oxygen defects in Ge samples.
- ELSEVIER SCIENCEの論文
- 2006-04-01
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