Bound exciton states of isoelectronic centers in GaAs:N grown by an atomically controlled doping technique
スポンサーリンク
概要
American Physical Society (APS) | 論文
- Infrared study of the valence transition compound YbInCu4 using cleaved surfaces
- Interface electronic structure of alkanethiolate-passivated Au nanoparticles studied by photoelectron spectroscopy
- Dynamic final-state nanoparticle-substrate interaction in the photoemission of dodecanethiolate-passivated Ag nanoparticles on graphite substrates
- Hot-electron relaxation in the layered semiconductor 2H-MoS2 studied by time-resolved two-photon photoemission spectroscopy
- Modification of energy transfer from Si nanocrystals to Er3+ near a Au thin film