Optical absorption and photoluminescence in the ternary chalcopyrite semiconductor AgInSe2

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Optical-absorption and photoluminescence (PL) spectra have been measured on the ternarychalcopyrite semiconductor AgInSe2 at T=13–300 K. The direct-band-gap energy Eg of AgInSe2determined from the optical absorption measurements shows unusual temperature dependence atlow temperatures. The resultant temperature coefficient ?Eg/?Tis found to be positive at T<125 K and negative above 125 K. The PL spectra show asymmetric emission bands peaking at～1.18 and ～1.20 eV at T=13 K, which are attributed to donor-acceptor pair recombinationsbetween exponentially tailed donor states and acceptor levels. An energy-band scheme has beenproposed for the explanation of the peculiar PL emission spectra observed in AgInSe2.
2006-12-01