ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH INORGANIC GATE OXIDE FOR PH SENSING
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概要
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Ion-sensitive fieldeffect transistors (ISFET’s) have beenfabricated by using silicon fiims on sapphire substrates (SOS). Usingthis structure Si02, Zr02, and TazO5 films are examined as hydrogenion-sensitive materials, and TazO5 fiim has been found to have the highestpH sensitivity (56 mV/pH) among them. The measured pH sensitivityof this SOS-ISFET’s is compared with the theoretical sensitivitybased on the site-binding model of proton dimciation reaction on themetal oxide f i i and good agreement between them is obtained.
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCの論文
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | 論文
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