HIGH-FREQUENCY PROPERTIES OF ALL-NBN NANOBRIDGES WITH GAP STRUCTURE IN IV CURVES

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AI I-NbN nanobridges with gap s t r u c t u r e i n I-V curveshave been reproducibly constructed using RIE and l i f t - o f ftechniques. The nanobridges had a width of 2 Dm, and athickness of<30 nm. The length ol nanobridge was about ofthe order of 3 to 5 coherence length of epitaxial NbN f i Ins.The nanobridges had nearly ideal characteristics: sharplyd e f i n e d c r i t i c a l c u r r e n t , h i g h r e s i s t a n c e , w e l l - d e f i n e d gaps t r u c t u r e a t about 4 mV, large I& products of -3 mV, andlow excess current. Small-area dc SQUIDS were made using thenanobridges, and anaIys&s of the response to magnetic f l u xwere perforaed. The current-phase relationship of the nanobridgeswas found t o be close to sinusoidal. The maximumLC resonant voltage was about 1.2 mu, corresponding to afrequency of 580 GHz. The I F peak was obtained up t o t h ebias voltage of about 4 mV in 101 GHz Josephson mixing.
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