EFFECTS OF ALUMINUM OVER-LAYER THICKNESS ON CHARACTERISTICS OF NIOBIUM TUNNEL-JUNCTIONS FABRICATED BY DC MAGNETRON SPUTTERING
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We have fabricated Nb/AlOX/Nb Josephson tunnel junctions using a sputtering apparatus with a load-lock system. The junctions that had 50 mu m x 50 mu m area showed a V-m value (the product of the critical current and the subgap resistance at 2 mV) as high as 50 mV at a current density of 160 A/cm(2). Moreover, junctions having different thicknesses of the Al over-layer were concurrently fabricated on one wafer to study the dependence of the current-voltage characteristics on this Al over-layer. The I-V characteristics were also calculated by McMillan's tunneling model and were compared with the measured I-V characteristics.
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