Photoinduced fluorescence enhancement in CdSe/ZnS quantum dot monolayers: Influence of substrate

概要

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Photoinduced fluorescence enhancement (PFE) of CdSe/ZnS core/shell quantum dot (QD) films on SiO_x substrates was investigated. The fluorescence intensity of the QD film on SiO_<1.9> was greatly enhanced by continuous irradiation in vacuum, while the same QD film on SiO_<0.6> showed a small enhancement of the fluorescence intensity. After irradiation, the rate of fluorescence decay of the QD film on SiO_<0.6> was smaller than that of the QD film on SiO_<1.9>. Our results suggest that the origin of PFE derives from the photoejection of electrons into the substrate, and that the oxygen-excess-related defects work as trap sites for the electrons.
2006-07-18