High-frequency characteristics and saturation electron velocity of InAlAs/InGaAs metamorphic high electron mobility transistors at high temperatures
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We fabricated InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) with several indium contents. High-frequency performance of the MHEMTs was measured at high temperatures up to 473 K. By the delay time analysis, we have estimated saturation electron velocity. Temperature dependence of the saturation electron velocity for the MHEMTs with higher indium contents exhibits deviations from a theory.2004 International Conference on Indium Phosphide and Related Materials : 16th IPRM : conference proceedings : May 31 (Mon.) - June 4 (Fri.), 2004, Kagoshima Shimin Bunka Hall, Kagoshima, Japan / sponsored by the Japan Society of Applied Physics, IEEE Lasers and Electro-Optics Society, and IEEE Electron Devices Society.
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Institute of Electrical and Electronics Engineers (IEEE) | 論文
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