Topologically induced surface electron state on Si(111) surfaces

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概要

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• First-principle electronic structure calculation reveals the appearance of a new class of surface state onhydrogenated and clean Si(111) surfaces. The states are found to exhibit different characteristics to conventionalsurface electron states in terms of the peculiar distribution of the wavefunction depending onthe wavenumber. In addition, the state results in flat dispersion bands in a part of the surface Brillouinzone having energy of about 8 eV below the top of the valence band. An analytic expression based onthe tight-binding approximation corroborates the surface electron state results from the delicate balanceof the electron transfer among the atoms situated near the surface. The obtained results give a possibleextension and generalization of the edge state in graphite ribbons with zigzag edges.

• Elsevier B.V.の論文

著者

• Okada Susumu

  Jst‐crest Saitama Jpn

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