Influence of oxygen flow ratio on the oxidation of Ti target and the formation process of TiO_2 films by reactive sputtering
スポンサーリンク
概要
- 論文の詳細を見る
Ti and TiO_2 films were deposited by RF reactive sputtering using a mixed gas of Ar and O_2. TiO_2 films were found to be formed at oxygen flow ratios above 7%. At the critical O_2 flow ratio, the amount of supplied Ti atoms was found to agree with that of O_2 molecules. Above the critical O_2 flow ratio, the amount of supplied O_2 molecules exceeded the gettering effect of the sputtering Ti atoms and oxygen density in the plasma began to increase. As a result, the surface of the Ti target was oxidized and TiO_2 films were formed. The thickness of the oxide film formed on the Ti target increased with increasing oxygen flow ratio and a maximum thickness of 5-6 nm was obtained at oxygen flow ratios of 40-100%.
論文 | ランダム
- 建設機械の進歩と行方(巻頭言) (建設機械の進歩と行方)
- ブルド-ザ転落時のROPSの挙動
- ヘドロ浚渫装置の開発
- 強力締固め形アスファルトフィニッシャの性能試験報告
- ブルドーザ (建設機械の現状-2の1-土工機械-2,3-)