Effects of thermal treatment on structure and electrical properties of sputtered Ir-W alloy thin films
スポンサーリンク
概要
- 論文の詳細を見る
Thermally and chemically stable electrode films are required for capacitor electrodes of semiconductor memories, such as dynamic random access memories (DRAMs) and ferroelectric random access memories (FeRAMs). In this study, iridium-tungsten (Ir-W) alloy thin films were prepared on SiO_2/Si substrates by RF magnetron sputtering, and the effects of thermal treatment in oxygen atmosphere on the structural and electrical properties of the films were studied. The surface of the as-deposited Ir-W films was very smooth and the films showed low electrical resistivities below 120 μΩcm. The resistances and the smooth surface morphology of the Ir-W (approximately 20 at.%) films remained after thermal treatment up to 600°C in oxygen, which indicates the high thermal stability of the Ir-W alloy thin films.
論文 | ランダム
- 10m落下塔を用いた短時間微小重力下でのホットディスク法による溶融金属の熱伝導度測定
- TbFe_2, SmFe_2超磁歪材の結晶方位制御
- 10m落下塔を利用した微小重力環境下でのCdTe急速結晶成長条件とその形成組織
- 球状シリコン半導体の製造
- 落下管を用いた均質Fe-Si合金の合成