Orientation of metal films deposited by sputtering using Ar/N_2 gas mixtures

概要

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The influence of adding N_2 to the sputtering gas on the crystal orientation of metal films was investigated. We observed a crystal orientation change of Ni films from (111) to (100) upon the addition of N_2 into the sputtering gas. The increase of substrate temperature resulted in higher degree of orientation of Ni films. Applying a similar deposition condition, Ag and Cu films were also deposited. However, no change was observed for Ag films. Cu films deposited at room temperature showed orientation change but the crystallinity became poor due to the incorporation of nitrogen. It is considered that the difference in the influence of N_2 addition is a result of the strength of interaction between nitrogen and metals. We must determine the suitable deposition conditions for the orientation change.