S054102 水蒸気と水の混合噴流によるレジスト除去([S05410]噴流,後流,およびはく離流れの基礎と応用:最前線(10))

概要

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In the manufacturing process of semiconductor device, MEMS, and so on, lithography which uses photo-resist is a key process to fabricate micro or nano-scale structures, and unnecessary resist should be removed after the process. Typically SPM is used for the resist removal. In this study, we apply the method of steam-water mixed spray that can remove resist without chemicals. In order to clarify the detail mechanism of resist removal, we performed resist removal experiment. In the experiment, spray is traversed over a resist-coated wafer and the removal area is evaluated. The resist-coated conditions such as bake temperature, rotating speed are changed to evaluate the effects of mechanical properties of resist. In addition, removal force is measured to estimate the mechanical properties of resist by using SAICAS. As a result, it is shown that thicker or harder resist tends to be difficult to remove and the results suggest that this method mainly utilizes the physical force of high-speed droplets impact.
一般社団法人日本機械学会の論文
2011-09-11