117105 二層グラフェンの安定構造と電子的特性の解析(一般01 材料科学・材料力学1)
スポンサーリンク
概要
- 論文の詳細を見る
Because the charge transport property of graphene is superior to that of silicon, graphene is expected to be a good material of the next generation for electronic devices, and attracts much attention of researchers. Single-layered graphene is a zero band gap semiconductor. Accordingly, techniques of adjusting its band gap are necessary to its application. One of such techniques will be the use of bilayer graphene. In this article, the stable structure of bilayer graphene is obtained by means of molecular dynamics. And the band structures of the local parts of the stable structure are calculated by means of first-principles calculation. It turns out that the magnitude of the band gap is changed by shifting the relative configuration of the two layers of bilayer graphene.
- 一般社団法人日本機械学会の論文
- 2011-03-17
著者
関連論文
- T0101-3-1 原子論的シミュレーションによる多層グラフェンナノブリッジの解析([T0101-3]マイクロ・ナノ材料システムの力学と強度・機能評価(3):先端材料システムの強度・機能解析(マクロ〜マイクロ・ナノ))
- T0301-2-3 金属ガラスナノワイヤの力学的特性の分子動力学解析([T0301-2]金属ナノ材料の創製と展開(2))
- 117105 二層グラフェンの安定構造と電子的特性の解析(一般01 材料科学・材料力学1)