ボロンドープ超ナノ微結晶ダイヤモンド膜の作製と電気特性

概要

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Ultrananocrystalline diamond (UNCD) film, which is one of the new materials, is expected to apply to various industrial applications because of their unique chemical and physical properties. In this study, boron-doped UNCD thin films with grain size of from 1.7 to 12.8 nm were fabricated at a room temperature (RT) in a vacuum using coaxial arc plasma deposition method. The electrical conductivity of the deposited thin films increased with the doped amount of born. Heterojunction comprised of p-type UNCD thin films and n-type Si, wherein boron-doped UNCD thin films was deposited on n-type Si substrates, was electrically measured. The current-voltage characteristics showed the typical rectification action with a threshold voltage of 0.25 V. The capacitance-voltage characteristics showed that the build-in potential (V[bi]) and an active carrier concentration were 0.15V and 7.0×10[15]cm[-3], respectively.
2013-10-31