T0302-2-4 X線トポグラフ法によるSi結晶の歪の分布の評価([T0302-2]高信頼マイクロ・ナノデバイスのための設計・計測技術(2):応力・ひずみ計測)

スポンサーリンク

概要

• 論文の詳細を見る

• Long-range strain in nearly perfect crystalline materials can be detected by X-ray dynamical diffraction. A very sensitive method is proposed for the detection of long-range strain in otherwise perfect crystalline materials. In the conventional method, specimens are set perpendicular to incident X-rays. In this method, the specimen is inclined with respect to the incident X-rays. Long-range strains due to a uniform bending or torsion, that are not detectable in the conventional method, are sensitively detected by this inclination method. This method has been applied to Si used for optical devices in Micro Electro Mechanical Systems, and strains concentrated locally are clearly revealed by this method.

• 一般社団法人日本機械学会の論文
• 2010-09-04

著者

• 坂 貴

  大同大学

関連論文

• T0302-2-4 X線トポグラフ法によるSi結晶の歪の分布の評価([T0302-2]高信頼マイクロ・ナノデバイスのための設計・計測技術(2):応力・ひずみ計測)

スポンサーリンク