D32 Effect of Anisotropy on Shape Measurement Accuracy of Silicon Wafer Using Three-Point-Support Inverting Method(Nano/micro measurement and intelligent instruments)

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This paper describes influences of anisotropy found in elastic modulus of monocrystalline silicon wafer on the measurement accuracy of the three-point-support inverting method which can measure the warp and thickness of thin-large panels simultaneously. The deflection due to gravity depends on the crystal orientation relative to the positions of the three-point-supports. Thus the deviation of actual crystal orientation from the direction indicated by the notch fabricated on the wafer causes a measurement error. It was confirmed by the numerical analysis of the deflection that the uncertainty of the thickness measurement is increased from 0.168μm to 0.524μm due to this measurement error. In addition, the experimental results showed that the rotation of crystal orientation relative to the three-point-supports is effective in preventing the wafer vibration excited by disturbance vibration because resonance frequency of the wafer can be changed. Thus, the accuracy of the surface shape measurement was improved by preventing the resonant vibration in the measurement.
一般社団法人日本機械学会の論文
2009-12-01