S1302-2-4 SiCウエハの超精密研削加工技術の開発(超精密加工(2))

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概要

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• Silicon Carbide (SiC) have attracted increasing attention as one of materials for next-generation power devices. However, there are difficulties in high-efficient and ultra-precision grinding of SiC materials due to hard and brittle characteristics. We investigated appropriate surface grinding condition of 4H-SiC wafers by using ultra-fine diamond wheels. In this paper, we realized some effects of the kind of grinding wheel and wheel speed by measuring grinding force, flatness and roughness on work. By using vitrified bonded diamond wheel SD2000V for rough grinding and resinoid bonded diamond wheel SD5000B for finish grinding, the accuracy of work surface has reached PV = 0.56μm in flatness and Rz = 20.2 nm in roughness.

• 2009-09-12

著者

• 和嶋 直

  宮城県産技セ

• 久田 哲弥

  宮城県産技セ

• 齋藤 佳史

  宮城県産技セ

• 家口 心

  宮城県産技セ

関連論文

• 高精度スライシング加工における外周刃ブレードの挙動解析比研削抵抗を砥粒切込み深さの関数とした場合
• S1302-2-4 SiCウエハの超精密研削加工技術の開発(超精密加工(2))

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