Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si_<0.7>Ge_<0.3> Virtual Substrates(Emerging Device Technologies,<Special Section>Heterostructure Microelectronics with TWHM2005)

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概要

• 論文の詳細を見る

• We present room temperature current voltage characteristics from SiGe interband tunneling diodes epitaxially grown on highly resistive Si(001) substrates. In this case, a maximum peak to valley current ratio (PVCR) of 5.65 was obtained. The possible integration of a SiGe tunnel diode with a strained Si transistor lead us to investigate the growth of SiGe interband tunneling diodes on Si_<0.7>Ge_<0.3> virtual substrates. A careful optimization of the layer structure leads to a maximum PVCR of 1.36 at room temperature. The latter value can be further increased to 2.26 at 3.7K. Our results demonstrate that high quality SiGe interband tunneling diodes can be realized, which is of great interest for future memory and high speed applications.

• 社団法人電子情報通信学会の論文
• 2006-07-01

著者

• Zhang Jing

  Xi'an Jiaotong Univ. Chn

• STOFFEL Mathieu

  Max-Planck-Institut fur Festkorperforschung

• ZHANG Jing

  Center for Electronic Materials and Devices, The Physics Department, Imperial College of Science, Te

• SCHMIDT Oliver

  Max-Planck-Institut fur Festkorperforschung

関連論文

• Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si_Ge_ Virtual Substrates(Emerging Device Technologies,Heterostructure Microelectronics with TWHM2005)
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• Performance Analysis of Opportunistic-Based Two-Way Relaying with Beamforming over Nakagami-m Fading Channels

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