GaN系表面ナノ構造光検出器(窒化物及び混晶半導体デバイス)

概要

論文の詳細を見る
Conventional photodetector can detect intensity of incident light by voltage or current, but it is not intensive to the change of incident angle or wavelength. In this work, we demonstrate the fabrication method of a GaN-based nanostructure photodetector using nanoimprint lithography (NIL). The nanopattern is regular triangles consisting of columns, whose diameter and pitch are 150 and 300nm, respectively. The photovoltage between p- and n-layers of this type of photodetector showed 6 or 12 periods when the incident illumination angles were changed on the surface or back side. Using the characteristics, this type of photodetector can find out the change of incidence angle or the change of wavelength of incident light. We demonstrate the principle of this type of photodetector using effective refractive index of the nanocolumn and air on the surface. At last possible applications in future are given.
社団法人電子情報通信学会の論文
2009-11-12