1-05-05 イオンビーム照射によるZnO圧電膜の配向制御(バルク波デバイス)

概要

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Ion bombardment during film deposition can modify the preferred orientation of the films. In this study, texture control of ZnO films using ion beam irradiation was investigated. In wurtzite films, the most densely packed (0001) plane should incur more damage than the (10T0) and (11Z0) planes which correspond to ion channeling directions. We therefore expect that the thermodynamically preferred (0001) oriented grain growth will be disturbed by ion damage so that the damage-tolerant (10T0) or (11Z0) orientated grains will preferentially develop instead. To investigate the effect of ion irradiation on the preferred orientation, ZnO films were fabricated using a 0-1 keV oxygen ion beam assisted electron beam evaporation of zinc. The results clearly indicated that the tendency of forming a (10T0) preferred orientation was enhanced with increasing ion energy and amount of ion irradiation. This demonstrated that the ion bombardment induced the (0001) preferred orientation to change into a (10T0) preferred orientation.
超音波エレクトロニクスの基礎と応用に関するシンポジウム運営委員会の論文
2007-11-14