スパッタ法によるSiC:H薄膜の光学・電気特性における高周波電力依存性
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概要
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SiC:H films have been deposited by reactive r.f. magnetron sputtering of Si target in hydrogen and methane (diluted by argon) gas mixtures. The effects of hydrogen partial pressme ratio R_H and r.f. power P on the structural, optical, and electrical properties of the films were investigated. With increasing R_H above 90%, a weak SiC (110) peak was observed by X-ray diffraction around 2 θ=60°. On the basis of this condition, the dependence of r.f power P was examined. As a result, it was found that mlcrocrystallization was enhanced by increasing r.f. power.
- 2009-09-30
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