Transmission electron microscopic study of CoSi2 epitaxial growth on hydrogen-terminated Si(001)

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概要

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• Epitaxial growth of CoSi2 on H-terminated Si(001) was studied by transmission electron microscopy and the epitaxial growth mechanism was presented. Direct reaction of Co with Si is suppressed on H-terminated Si below 400℃. Thus, the hydrogen at the Co/Si interface hinders the formation of low-temperature Co2Si and CoSi phases. Upon thermal desorption of hydrogen at around 400-550℃, CoSi2, which is closely lattice-matched to Si(001), grows on Si(001) and thin epitaxial CoSi2 films are formed on Si(001). The {111}-faceting is completely suppressed in the epitaxial CoSi2/Si(001), leading to the atomically flat interface between CoSi2 and Si(001)

• 2007-03-31

著者

• 石田 宏一

  Teikyo University Of Science & Technology. Department Of Media And Information Systems

関連論文

• Transmission electron microscopic study of CoSi2 epitaxial growth on hydrogen-terminated Si(001)

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