ワイドセルピッチトレンチゲートFS-IGBTのターンオン特性に与えるフローティングpベースの影響(パワーエレクトロニクス及び半導体電力変換一般)

概要

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In the turn-on period of IGBTs under inductive load switching, collector voltage waveform characterized by medium-voltage hump followed by long tail is occasionally observed. Moreover, the waveform causing larger turn-on dissipation is remarkable in Trench-gate FS-IGBTs designed under Wide-cell-pitch concept with Floating p-base. In order to understand the lossy waveform, transient behavior of the Floating p-base in Wide-cell-pitch Trench-gate FS-IGBT is analyzed quantitatively. Consequently, device physics of the FS-IGBT during turn-on is interpreted well by the proposed equivalent circuit dynamically changed with parasitic p-channel MOSFET and/or pnp transistor that work temporarily.
2008-10-16