Temperature dependence of dielectric properties for Sr_<0.3>Ba_<0.7>Bi_<3.7>La_<0.3>Ti_4O_<15> ferroelectric ceramics

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Bismuth layer structured ferroelectric ceramics, Sr_<0.3>Ba_<0.7>Bi_<3.7>La_<0.3>Ti_4O_<15> (abbreviated as SBBLT), were fabricated by conventional and two-step sintering techniques. The effects of sintering processes on microstructure and dielectric properties of Sr_<0.3>Ba_<0.7>Bi_<3.7>La_<0.3>Ti_4O_<15> ceramics were investigated. Dense and homogeneous ceramic materials with grain size of 1-3μm were obtained. The decrease of oxygen vacancies in the two-step sintered ceramics decreases the conductivity, and also dielectric constant and dielectric loss at high temperature. The Curie temperature is shifted from 408℃ of conventionally sintered ceramics to 345℃ of two-step sintered ceramics at a soaking time of 15h, which might attributed to smaller "rattling space" resulting from the decrease of unit-cell volume. The conductivity at high temperature decreases with increasing soaking time. The decrease in the conductivity is about one order of magnitude in two-step sintered samples.
社団法人日本セラミックス協会の論文
2009-02-01