SIMS study of SiC single crystal oxidized in atmosphere containing isotopic water vapor

概要

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Double oxidation of SiC single crystal was carried out in oxidizing gas (O_2 or H_2O) at 1673K first and then in isotopic water (H_2^<18>O or D_2O) at 1473K or 1573K to trace diffusing species during oxidation at high temperatures. SIMS analysis revealed that deuterium was enriched near SiO_2/SiC interface when SiC was oxidized in Ar/D_2O gas mixture at the second oxidation step, indicating that water molecules or hydroxyls diffused in SiO_2 layer to the SiO_2/SiC interface. Large amount of carbon in SiO_2 scale near the SiO_2/SiC interface after oxidation in dry Ar/O_2 gas mixture suggests a possibility that outward diffusion of carbonaceous species can be rate-controlling step during oxidation in dry Ar/O_2 atmosphere. Decrease in the amount of the carbon with oxidation time in Ar/H_2^<18>O gas mixture at the second oxidation step implies that the outward diffusion of carbonaceous species in SiO_2 scale was promoted during oxidation in atmosphere containing water vapor.
社団法人日本セラミックス協会の論文
2008-09-01