フラワー状InNの結晶成長メカニズム
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概要
- 論文の詳細を見る
Indium nitride prepared under atmospheric pressure using a halide chemical vapour deposition method has been examined by means of a variety of analytical techniques. From the scanning electron microscopic observations of the crystals deposited onto a Si(100) substrate, it was found that they have flower-like morphology. Based on the electron diffraction and X-ray photoelectron spectroscopic analyses, it was deduced that the flower-like InN crystals have a stoichiometry close to In : N=1 : 1. Transmission electron diffraction and selected area electron diffraction images showed that each petal and style constituting the flower are of single crystals form with staggered hexagonal bipyramidal structure. Furthermore, it was found that the flower-like InN was formed by the special crystal growth by high-resolution X-ray diffraction (HR-XRD).
- 福井工業大学の論文