VGF法によるIn_xGa_<1-x>Asの結晶成長

概要

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In order to obtain a lattice-matched substrate for ZnSe epitaxy, the crystal growth of In_xGa_<1-x>As at low indium content (x〜0.04) by using vertical gradient freeze method has been investigated. The effective segregation constant (keff) of about 0.08〜0.1 for indium is determined by X-ray diffraction measurements of grown crystals. Normal-freezing of the growth process is also confirmed by the Raman shift of the grown crystals at several different solidified fractions. High resolution X-ray rocking curve measurements show the full width at half maxima (FWHM) of about 23〜31 (sec) for the (400) diffraction of the grown crystals, indicating sufficient crystalline quality as for the substrate of ZnSe epitaxy. Further, a substantial reduction of an FWHM of (400) rocking curve for the epitaxally grown ZnSe film (1050 sec) on lattice-matched In_xGa_<1-x>As as compared with that grown on the conventional GaAs substrate (1800 sec) is confirmed.
2007-03-26